Oxygen defects created in CeO2 irradiated with 200 MeV Au ions
نویسندگان
چکیده
CeO2 films were irradiated with 200 MeV Au ions in order to investigate the damages created by electronic energy deposition. In the Raman spectra of the ion-irradiated films, a broad band appears at the higher frequency side of the F2g peak of CeO2. The band intensity increases as ion fluence increases. Furthermore, the F2g peak becomes asymmetric with a low frequency tail. In order to understand the origin of these spectral changes, an unirradiated CeO2 film was annealed in vacuum at 1000oC. By comparing the results for the irradiation and for the annealing, it is concluded that the broad band obtained for irradiated samples contains the peak observed for the annealed sample. The F2g peak becomes asymmetric with a low frequency tail by the irradiation as well as the annealing. Therefore, the above-mentioned changes in the Raman spectra caused by 200 MeV Au irradiation is closely related to the creation of oxygen vacancies. PACS codes: 61.82.Ms, 61.80.Jh
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